Half Doped Mg-Zn Aluminates: A Study of Their Feasibility in Advanced Applications | Chapter 7 | Research Trends and Challenges in Physical Science Vol. 2

Spinel materials based on MgAl2O4 are technologically essential materials, and their ability to be modified in various ways makes them an attractive material from an application standpoint. We present Mg0.5-xMxZn0.5Al2O4 aluminates produced by a high temperature solid state reaction method (x = 0, 0.05 and M = Co, Ni, Cu). The structural, optical, and electrical characteristics of these aluminate materials were studied. The sample crystallisation into the cubic phase is inferred using Rietveld refinement of XRD data (Fd-3m). The presentation of distinct absorption bands in the Fourier transform infrared (FTIR) and Raman inelastic scattering spectral analysis validates the anticipated sample construction. At room temperature, dielectric analysis demonstrates that these materials have a low dielectric constant of a few hundreds and a convincingly low loss value. The optical bandgap (Eg) was observed to decrease from 5.17eV for pristine to 3.9eV for Cu2+ doping using the UV-Vis characterization approach. Electrical modulus and impedance behaviour are also discussed in order to better understand the conduction process and factors that influence it. The electrical polarisation at various field values is also presented. In light of Jonscher’s law, we also focused on morphology, composition, and ac conductivity.

Author(S) Details

Mohd. Saleem
Materials Science Laboratory, School of Physics, Vigyan Bhawan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India.

View Book:- https://stm.bookpi.org/RTCPS-V2/article/view/4493

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